<p>The paper describes the methods of obtaining three barrier photodiode structures based on the semiconductor compounds АIIIВV and АIIВIV, their technological stages, as well as physical properties and technological features. It studies the current transport mechanism in the three-barrier photodiode Au p(AlGa)0.95In0.05As-nGaAs:O-Ag- structure determined by generation processes involving impurity levels and electron capture by impurity centers, as well as by the generation of minority carriers in the space charge region of the barriers to be blocked, in particular three-barrier photodiode Au-рAlGaInAs-nGaAs-Ag- structures based on varying the amount of indium in the heterolayer depending on its functional purpose.</p>